What This Document Is
This document comprises lecture notes from EE105 – Microelectronic Devices and Circuits at UC Berkeley, specifically focusing on Bipolar Junction Transistor (BJT) amplifiers. It delves into the theory and characteristics of different BJT amplifier configurations, building upon foundational concepts of transistor behavior. This material represents a core component of understanding analog circuit design.
Why This Document Matters
This resource is invaluable for students enrolled in introductory and intermediate microelectronics courses. It’s particularly helpful when you’re working to solidify your understanding of how to utilize BJTs as amplifying elements within larger circuits. Refer to these notes while completing homework assignments, preparing for exams, or seeking a deeper understanding of amplifier design principles. It’s best used in conjunction with assigned textbook readings and after initial exposure to BJT fundamentals.
Topics Covered
* Common-Emitter Amplifier configurations and analysis
* Common-Collector Amplifier configurations and analysis
* Common-Base Amplifier configurations and analysis
* Small-signal modeling of BJT amplifiers
* Key amplifier parameters: input resistance, output resistance, and current gain
* Two-Port Model application to BJT amplifier circuits
* DC Bias considerations for amplifier operation
* Output swing limitations and analysis
What This Document Provides
* A focused exploration of three fundamental BJT amplifier topologies.
* Discussion of relevant parameters for characterizing amplifier performance.
* A framework for analyzing amplifier circuits using established modeling techniques.
* Connections to related concepts discussed in Chapter 8 of the course textbook.
* A basis for understanding the trade-offs between different amplifier configurations.
