What This Document Is
This is a homework assignment for ELENG 140, Linear Integrated Circuits, at the University of California, Berkeley. It focuses on the practical application of fundamental transistor modeling concepts and circuit simulation techniques. The assignment centers around analyzing and replicating the behavior of an NMOS transistor using both measured data and the HSPICE simulation program. It requires students to extract key transistor parameters and validate their models against experimental results.
Why This Document Matters
This assignment is crucial for students learning to bridge the gap between theoretical transistor models and real-world circuit behavior. It’s particularly beneficial for those preparing for more advanced coursework or internships in analog circuit design. Students tackling this assignment will strengthen their skills in data analysis, model parameter extraction, and circuit simulation – all essential for successful integrated circuit design. It’s best utilized after gaining a solid understanding of NMOS transistor characteristics and basic circuit analysis techniques.
Topics Covered
* NMOS Transistor Modeling (Level 1)
* Parameter Extraction (Vt0, Gamma, Lambda, Kp)
* Small-Signal Analysis (Gm, Gmbs, ro)
* HSPICE Netlist Creation and Modification
* Circuit Simulation and Verification
* Subthreshold Current Analysis
* Data Analysis and Comparison (Measured vs. Simulated Results)
What This Document Provides
* Measured data sets for NMOS transistor characteristics (Id-Vds and Id-Vgs curves).
* A starting point HSPICE netlist for simulating transistor behavior.
* A framework for comparing simulation results with experimental data.
* Guidance on modifying simulation parameters to match different operating conditions.
* A practical exercise in validating transistor models through simulation.
