What This Document Is
This is a detailed laboratory experiment guide focused on the characteristics of Bipolar Junction Transistors (BJTs). Developed for the EE 105 Microelectronic Devices and Circuits course at UC Berkeley, it provides a hands-on exploration of BJT behavior and modeling. The guide outlines a series of measurements and analyses designed to solidify understanding of this fundamental semiconductor device. It’s structured as a practical lab exercise, intended to be used in conjunction with classroom lectures and assigned readings.
Why This Document Matters
This resource is essential for students taking microelectronics courses, particularly those focusing on analog circuit design. It’s ideal for anyone needing a deeper understanding of BJT operation beyond theoretical concepts. Students will benefit from this guide during lab sessions, when preparing lab reports, and when studying for related exams. It’s particularly useful for those who learn best by applying theory to practical measurements and building a strong intuition for device behavior.
Topics Covered
* The four primary regions of BJT operation
* Determining the operational region based on voltage conditions
* Large-signal parameter extraction for BJTs
* Ebers-Moll modeling of BJT characteristics
* Analysis of collector and base currents
* Impact of voltage variations on BJT performance
* Early voltage and its significance
* Beta (β) calculation and interpretation
What This Document Provides
* A comprehensive experimental procedure for characterizing BJTs
* Detailed circuit diagrams for BJT testing
* Guidance on data collection and analysis techniques
* Instructions for utilizing specific lab equipment (M3500, HP-4155)
* A framework for deriving large-signal models in different operating regions
* Suggestions for data tabulation and graphical representation
* References to relevant textbook chapters for pre-lab preparation.