What This Document Is
This document is a sample midterm examination for EECS 130, Integrated-Circuit Devices, offered at the University of California, Berkeley. It’s designed to assess understanding of core principles related to semiconductor devices and their behavior. This sample provides a representative format and style of questions students can expect on the actual Midterm II assessment.
Why This Document Matters
This resource is invaluable for students currently enrolled in or preparing for a similar integrated-circuit devices course. It’s particularly useful for self-assessment, identifying knowledge gaps, and familiarizing yourself with the types of problems and analytical skills required for success. Utilizing this sample allows you to practice applying theoretical concepts to practical scenarios *before* a graded evaluation, helping to build confidence and improve performance. It’s best used as part of a comprehensive study plan, alongside lecture notes and assigned readings.
Topics Covered
* MOS Capacitors (CV characteristics, doping effects, oxide thickness)
* Metal-Oxide-Semiconductor (MOS) Capacitor Analysis
* Semiconductor Device Physics fundamentals
* P-N Junction Diode Characteristics (breakdown voltage, capacitance)
* Carrier Transport in Semiconductors (diffusion, recombination)
* Energy Band Diagrams
* Diode Current Density
What This Document Provides
* A full-length practice exam mirroring the format of the actual Midterm II.
* A variety of problem types, including analytical calculations and qualitative explanations.
* Key physical constants relevant to semiconductor device analysis.
* Problems focusing on the relationship between device parameters (doping, oxide thickness, voltage) and device characteristics.
* Opportunities to practice sketching and interpreting device behavior through diagrams and graphs.
* A clear indication of the point value associated with each problem, reflecting its relative importance.
