What This Document Is
This document consists of a past test from EE130, Integrated-Circuit Devices, offered at the University of California, Berkeley. Specifically, it’s a closed-book examination designed to assess understanding of core MOSFET principles and device physics. It focuses on applying theoretical knowledge to analyze and predict the behavior of MOSFETs under various operating conditions and design considerations. The test emphasizes a strong grasp of the relationships between device parameters and performance characteristics.
Why This Document Matters
This material is exceptionally valuable for students currently enrolled in, or planning to take, an integrated-circuit devices course. It’s ideal for self-assessment, practice under exam conditions, and identifying areas where further study is needed. Working through problems similar to those presented here will build confidence and improve problem-solving skills crucial for success in the course and related fields. It’s particularly useful when preparing for midterms or a final examination, allowing you to gauge your understanding of key concepts.
Topics Covered
* MOSFET Punchthrough Voltage and Channel Length
* Band Diagrams and Energy Band Analysis in MOSFETs
* Small-Signal Output Resistance of MOSFETs
* Impact of Channel Doping on MOSFET Characteristics
* Subthreshold Conduction and Current Flow Mechanisms
* Scaling of MOSFET Parameters (Channel Length, Oxide Thickness)
* Relationship between Channel Length Scaling, Speed, and Power Consumption
* Limitations of Gate Oxide Scaling (Polysilicon Gate Issues, Quantum Effects, Tunneling)
What This Document Provides
* A complete, previously administered exam with multiple questions.
* Problems requiring both qualitative explanations and graphical representations (band diagrams).
* Scenarios involving variations in device parameters (doping, gate workfunction, oxide thickness).
* Opportunities to apply concepts related to device limitations and scaling challenges.
* A benchmark for evaluating your understanding of advanced MOSFET behavior.
