What This Document Is
This document represents a focused section – Metallization – from the ELENG 143 Microfabrication Technology course materials at UC Berkeley. It delves into the critical processes involved in creating the conductive pathways within microfabricated devices. Metallization is a core component of nearly all microfabrication workflows, and this section provides a detailed exploration of the underlying principles and practical considerations. It builds upon concepts introduced in Jaeger Chapter 7, offering a deeper dive into the specifics of interconnect formation and optimization.
Why This Document Matters
This resource is essential for students and professionals seeking a comprehensive understanding of microfabrication techniques. It’s particularly valuable for those studying integrated circuit fabrication, MEMS (Micro-Electro-Mechanical Systems) design, or semiconductor physics. Engineers working on device fabrication, process development, or reliability testing will also find this section highly relevant. Understanding metallization is crucial for optimizing device performance, ensuring long-term reliability, and troubleshooting fabrication issues. Access to the full content will empower you to confidently tackle complex microfabrication challenges.
Topics Covered
* Multilevel Metallization architectures and components
* Interconnect characteristics: resistance and capacitance
* Key requirements for effective interconnect design
* Material properties of commonly used metals in microfabrication
* Ohmic contact formation and factors influencing contact resistance
* Challenges related to aluminum spiking and junction penetration
* Techniques for contact alloying and resistivity reduction
* Mechanisms of electromigration and strategies for mitigation
* Various metal deposition techniques, including sputtering and CVD
What This Document Provides
* Detailed discussion of interconnect RC time delay and its implications.
* Comparative data on the resistivity of various metals used in metallization.
* Insights into the physics governing specific contact resistivity.
* An overview of barrier metal applications in preventing unwanted diffusion.
* Examination of the relationship between current density and electromigration failure.
* A comparative analysis of sputtering and CVD metal deposition processes.
* Exploration of TiN deposition processes and its role as a barrier metal.
